| |
|
|
|
|
|
|
|
|
|
|
|
| Input data |
Vinn= |
230.0 |
Vrms |
Nom AC Input Voltage |
|
|
|
|
| |
Iinn= |
12.24 |
Arms |
Nom rms Input Current |
|
|
|
|
| |
Irpkn= |
17.32 |
Apk |
Nom line peak rectified current |
|
|
|
|
| |
Iravgn= |
11.02 |
Aavg |
Nom avg rectified current |
|
|
|
|
| |
Ibpkn= |
20.13 |
Apk |
Boost Ind, Switch and Diode nom avg
pk current |
|
|
|
|
| |
Ibacn= |
2.00 |
Arms |
Boost Ind ripple nom rms current |
|
|
|
|
| |
PF= |
0.9993 |
|
Estimated Input Power Factor @ Full
Load |
|
|
|
|
| |
Voutn= |
27.22 |
Vdc |
Nominal DC Output Voltage |
|
|
|
|
| |
Ioutn= |
90.00 |
Adc |
Nominal Output Current |
|
|
|
|
| |
Pomax= |
2,450 |
W |
Maximum Output Power, DC/DC Stage |
|
|
|
|
| |
Iaux= |
56 |
mA |
Auxiliary Power Supply current |
|
|
|
|
| |
Tamb= |
50.0 |
°C |
Maximum Ambient Temperature |
|
|
|
|
| |
|
|
|
|
|
|
|
|
| Output data |
Pin= |
2,814 |
W |
Input Active Power |
|
|
|
|
| |
Ppfc= |
2,689 |
W |
Maximum Output Power, PFC Stage |
|
|
|
|
| |
Pinl= |
35.5 |
W |
Total Input Stage power loss |
|
|
|
|
| |
Ppfcl= |
89.5 |
W |
Total PFC Stage power loss |
|
|
|
|
| |
Pdcl= |
60.7 |
W |
Total DC/DC Stage power loss |
|
|
|
|
| |
Poutl= |
156.1 |
W |
Total Output Stage power loss |
|
|
|
|
| |
Paul= |
22.8 |
W |
Auxiliary circuits power loss |
|
|
|
|
| |
Pm= |
39.9 |
W |
Total Magnetics loss |
|
|
|
|
| |
Ps= |
243.6 |
W |
Total Semiconductors Loss |
|
|
|
|
| |
Ptl= |
364.6 |
W |
Total Power Loss |
|
|
|
|
| |
Effpfc= |
95.56 |
% |
PFC (+ Input Stage, + Aux) Efficiency |
Measured: XX.X % |
|
|
|
| |
Effdc= |
91.87 |
% |
DC/DC (+ Output Stage) Efficiency |
Measured: YY.Y % |
|
|
|
| |
Eff= |
87.04 |
% |
Total Efficiency |
Measured: ZZ.Z % |
|
|
|
| |
|
|
|
|
|
|
|
|
| |
|
|
|
|
|
|
|
|
| |
Input Stage Loss Evaluation |
|
|
|
|
| |
|
|
|
|
|
|
|
|
| Input data |
Rif= |
2.00 |
mOhm |
DC Resistance, Input Fuses |
20A/250V/S/HC(*2) |
|
|
|
| |
Ricm1= |
7.57 |
mOhm |
DC Resistance, Input CM Inductor 1 |
1mH (*2) |
|
|
|
| |
Ricm2= |
7.57 |
mOhm |
DC Resistance, Input CM Inductor 2 |
1mH (*2) |
|
|
|
| |
Ridm= |
17.17 |
mOhm |
DC Resistance, Input DM Inductor(s) |
30uH (*2) |
|
|
|
| |
Rbinlf= |
19.10 |
mOhm |
PCB AC Input path, low frequency |
|
|
|
|
| |
Vidb= |
0.89 |
V |
Voltage drop, one diode Input Bridge
@ Iinnpk |
1/4*D25XB60, typ |
|
|
|
| |
Visb= |
0.89 |
V |
Voltage drop, one SCR Input Bridge @
Iinnpk |
1/4*D25XB60, typ |
|
|
|
| |
Rdthjc= |
2.00 |
°C/W |
Input diodes junction to case thermal
resistance |
1/2*D25XB60 |
|
|
|
| |
Rdthcs= |
0.22 |
°C/W |
Input diodes case to heat sink
thermal resistance |
1/2*D25XB60 |
|
|
|
| |
Rsthjc= |
2.00 |
°C/W |
Input SCRs junction to case thermal
resistance |
1/2*D25XB60 |
|
|
|
| |
Rsthcs= |
0.22 |
°C/W |
Input SCRs case to heat sink thermal
resistance |
1/2*D25XB60 |
|
|
|
| |
Tidjx= |
125 |
°C |
Input diodes maximum junction
temperature |
D25XB60 |
|
|
|
| |
Tidj= |
125 |
°C |
Input diodes actual junction
temperature |
Estimated |
|
|
|
| |
Tisjx= |
125 |
°C |
Input SCRs maximum junction
temperature |
D25XB60 |
|
|
|
| |
Tisj= |
125 |
°C |
Input SCRs actual junction
temperature |
Estimated |
|
|
|
| |
|
|
|
|
|
|
|
|
| Output data |
Pif= |
0.6 |
W |
Power loss, input fuses |
2*MDA-V-20 |
|
|
|
| |
Picm1= |
2.3 |
W |
Power Loss, Input CM Inductor 1 |
|
|
|
|
| |
Picm2= |
2.3 |
W |
Power Loss, Input CM Inductor 2 |
|
|
|
|
| |
Pidm= |
5.1 |
W |
Power Loss, Input DM Inductor(s) |
|
|
|
|
| |
Pbinlf= |
5.7 |
W |
Power loss, PCB, input stage |
2 x 1/2 |
|
|
|
| |
Pidb= |
9.8 |
W |
Power Loss, Input Diode Bridge |
1/2*D25XB60 |
|
|
|
| |
Pisb= |
9.8 |
W |
Power Loss, Input SCR Bridge |
1/2*D25XB60 |
|
|
|
| |
Pinu= |
35.5 |
W |
Total Input Stage power loss |
|
|
|
|
| |
Tdc= |
105 |
°C |
Case temperature, diodes |
|
|
|
|
| |
Tsc= |
105 |
°C |
Case temperature, SCRs |
|
|
|
|
| |
Tdh= |
103 |
°C |
Diodes heat sink temperature |
|
|
|
|
| |
Tsh= |
103 |
°C |
SCRs heat sink temperature |
|
|
|
|
| |
Ridthsx= |
5.46 |
°C/W |
Max. Diodes Heat sink Thermal
Resistance |
|
|
|
|
| |
Ridths= |
2.25 |
°C/W |
Chosen Diodes Heat sink Thermal
Resistance |
|
|
|
|
| |
Risthsx= |
5.46 |
°C/W |
Max. SCRs Heat sink Thermal
Resistance |
|
|
|
|
| |
Risths= |
2.25 |
°C/W |
Chosen SCRs Heat sink Thermal
Resistance |
|
|
|
|
| |
|
|
|
|
|
|
|
|
| |
|
|
|
|
|
|
|
|
| |
PFC Stage Loss Evaluation |
|
|
|
|
|
| |
|
|
|
|
|
|
|
|
| Input data |
Vba= |
407.0 |
Vdc |
Average Boost Voltage |
|
|
|
|
| |
fpfc= |
140 |
kHz |
PFC Switching Frequency |
|
|
|
|
| |
Iba= |
6.61 |
A |
Average PFC output current |
|
|
|
|
| |
Iba= |
6.81 |
A |
Average PFC output current |
Copy from above cell |
|
|
|
| |
Ibswn= |
6.9 |
Arms |
Switch rms current at nom line |
|
|
|
|
| |
Ibpkon= |
7.9 |
Apk |
SW turn ON, Diode turn OFF pk
current, max avg |
|
|
|
|
| |
Ibpkoff= |
16.5 |
Apk |
SW turn OFF, Diode turn ON pk
current, max avg |
|
|
|
|
| |
kf= |
1 |
|
1 for Hard SW, 2 for Soft SW |
Hard
switching |
|
|
|
| |
dIf/dt= |
1,042 |
A/us |
Turn-ON current slope, max, should be
chosen < |
1259 |
|
|
|
| |
Lsnb= |
0.00 |
uH |
Boost snubber inductor |
NOT
required |
|
|
|
| |
dVd/dton= |
-23.0 |
kV/us |
SS turn ON dV/dt for MOSFET drain
voltage < |
NOT
required |
|
|
|
| |
nd= |
1 |
|
Number of boost diodes |
APT30DS60B |
|
|
|
| |
Vbd= |
2.83 |
V |
Diode forward voltage @ peak line
current |
APT30DS60B |
|
|
|
| |
Vbdfr= |
21.00 |
V |
Diode forward recovery voltage |
APT30DS60B |
|
|
|
| |
tfrx= |
50.0 |
ns |
Diode forward recovery time |
APT30DS60B |
|
|
|
| |
Irrpk= |
21.8 |
A |
Boost diode pk reverse recovering
current |
APT30DS60B |
|
|
|
| |
trrx= |
30.0 |
ns |
Boost diode reverse recovering time |
APT30DS60B |
|
|
|
| |
ta= |
20.9 |
ns |
|
APT30DS60B |
|
|
|
| |
tb= |
9.1 |
ns |
|
APT30DS60B |
|
|
|
| |
Rthjc= |
0.66 |
°C/W |
Boost diode(s) junction-case thermal
resistance |
APT30DS60B |
|
|
|
| |
Rthcs= |
0.71 |
°C/W |
Boost diode(s) case-heatsink thermal
resistance |
APT30DS60B |
|
|
|
| |
Tjbdx= |
130 |
°C |
Boost diode(s) maximum junction
temperature |
|
|
|
|
| |
Tjbd= |
135 |
°C |
Boost diode(s) junction temperature |
same htsk with BT |
|
|
|
| |
Tjbd= |
135 |
°C |
Boost diode(s) junction temperature |
Copy from above cell |
|
|
|
| |
nt= |
2 |
|
Number of transistors |
|
|
|
|
| |
Rdso= |
0.070 |
Ohm |
MOSFET Rdson, max @25°C |
SPW47N60S5 |
|
|
|
| |
Rds= |
0.072 |
Ohm |
Actual MOSFET(s) Rds ON |
SPW47N60S5 |
|
|
|
| |
Vgsth= |
6.50 |
V |
Gate Threshold Voltage |
SPW47N60S5 |
|
|
|
| |
Vx= |
25.0 |
V |
Vds voltage @ t3 |
SPW47N60S5 |
|
|
|
| |
gfs= |
30.0 |
S |
Forward Transconductance |
SPW47N60S5 |
|
|
|
| |
Q3= |
6.4 |
nC |
Gate
charge t2 -> t3 |
SPW47N60S5 |
|
|
|
| |
Cisu= |
8,360 |
pF |
Ciss @ Vds=Vba &
Vgsth<Vgs<Vgsp |
SPW47N60S5 |
|
|
|
| |
Coer= |
233 |
pF |
MOSFET output capacitance @ Vba |
SPW47N60S5 |
|
|
|
| |
rg= |
8.70 |
Ohm |
Transistor intrinsic gate resistance |
SPW47N60S5 |
|
|
|
| |
Ls= |
9.0 |
nH |
Source inductance |
SPW47N60S5 |
|
|
|
| |
Vgson= |
14.0 |
V |
Effective gate ON voltage |
|
|
|
|
| |
Vgsoff= |
-5.0 |
V |
Effective gate OFF voltage |
|
|
|
|
| |
Vgst2->3= |
6.81 |
V |
Vgs
from t2b to t3 |
|
|
|
|
| |
Vgst2->3= |
6.81 |
V |
Vgs
from t2b to t3 |
Copy from above cell |
|
|
|
| |
Vgst2a= |
6.63 |
V |
Vgs when Id=Idiode |
|
|
|
|
| |
Vlsta= |
4.69 |
V |
Voltage
across Ls during turn-on, t1->t2 |
|
|
|
|
| |
t:1->2a= |
7.6 |
ns |
time from Id starting to rise to Id
reaching the Idiode |
|
|
|
|
| |
t:2->3= |
16.6 |
ns |
time from Vds starting to drop to
Vds=Vx |
Hard
switching |
|
|
|
| |
dVd/dton= |
-23.0 |
kV/us |
Turn ON dV/dt for MOSFET drain
voltage |
|
|
|
|
| |
Vsaton= |
0.6 |
V |
Vdrain after turn-on |
|
|
|
|
| |
Icossf= |
-5.3 |
A |
Coss current during voltage falling |
SPW47N60S5 |
|
|
|
| |
Rswonc= |
10.2 |
Ohm |
Gate turn ON resistor |
Determined
by dI/dt |
|
|
|
| |
Rswon= |
10.0 |
Ohm |
Gate turn ON resistor, chosen |
=Rswonc |
|
|
|
| |
Rswoff= |
0.5 |
Ohm |
Gate turn OFF resistor, chosen |
|
|
|
|
| |
Csf= |
0 |
pF |
Optimum Boost snubber capacitor |
NOT
required |
|
|
|
| |
Csf= |
0 |
pF |
Boost snubber capacitor |
NOT
required |
|
|
|
| |
Vsatoff= |
1.2 |
V |
Vdrain before turn-off |
|
|
|
|
| |
Vgst3r= |
6.78 |
V |
Vgs @ t3r, before Vds begins to rise |
Hard
switching |
|
|
|
| |
t:3r->2r= |
10.8 |
ns |
time from Vds=Vx to Vds=Vb |
Hard
switching |
|
|
|
| |
dVd/dtoff= |
35.5 |
kV/us |
Turn OFF dV/dt for MOSFET drain
voltage |
|
|
|
|
| |
Icossr= |
8.27 |
A |
Coss current during voltage rising |
|
|
|
|
| |
Icsf= |
0.00 |
A |
Csf current during voltage rising |
not
present |
|
|
|
| |
Icht3r->2r= |
0.00 |
A |
Internal channel current |
|
|
|
|
| |
Vgst2r= |
6.50 |
V |
Vgs @ t2r, after Vds reach Vb |
Hard
switching |
|
|
|
| |
dId/dt= |
-2,013 |
A/us |
Turn-OFF current slope (internal
channel !) |
|
|
|
|
| |
t:2r->1r= |
8.2 |
ns |
time from Ichannel going from Id to
zero |
|
|
|
|
| |
Vlsoff= |
-9.06 |
V |
Voltage across Ls during turn-off |
|
|
|
|
| |
Rthjc= |
0.30 |
°C/W |
MOSFET(s) junction to case thermal
resistance |
SPW47N60S5 |
|
|
|
| |
Rthcs= |
0.71 |
°C/W |
MOSFET(s) case to heat sink thermal
resistance |
SPW47N60S5 |
|
|
|
| |
Tjbtx= |
125 |
°C |
MOSFET(s) Maximum junction
temperature |
|
|
|
|
| |
Tjbt= |
110 |
°C |
MOSFET(s) actual junction temperature |
|
|
|
|
| |
Resrlf= |
63 |
mOhm |
ESR@100Hz, Boost Capacitors |
3*470uF |
|
|
|
| |
Resrhf= |
36 |
mOhm |
ESR@100kHz, Boost Capacitors |
3*470uF |
|
|
|
| |
Rspfc= |
15.0 |
mOhm |
PFC shunt resistor |
|
|
|
|
| |
Rbpfchf= |
6.4 |
mOhm |
PCB PFC path high frequency |
|
|
|
|
| |
Pbitl= |
12.4 |
W |
Boost Inductor total loss |
|
|
|
|
| |
|
|
|
|
|
|
|
|
| Output data |
Pt5= |
3.5 |
W |
Conduction Loss in MOSFET(s) |
|
|
|
|
| |
Pt1->2= |
5.5 |
W |
Turn ON Switching Loss in MOSFET(s) |
Hard
switching |
|
|
|
| |
Pt2a->2b= |
22.4 |
W |
MOSFET turn ON Switching Loss due to
the diode |
|
|
|
|
| |
Pt2->2b= |
5.7 |
W |
Turn
ON Switching Loss due to the diode |
MOSFET(s) +
Diode(s) |
|
|
|
| |
Pt4= |
3.9 |
W |
Turn OFF Switching Loss in MOSFET(s) |
|
|
|
|
| |
Pt5= |
5.4 |
W |
Transistor Capacitance discharge Loss |
|
|
|
|
| |
Ptr= |
43.5 |
W |
Total Losses Main Switch(s) |
|
|
|
|
| |
Pdc= |
19.3 |
W |
Conduction losses in the Boost
Diode(s) |
|
|
|
|
| |
Pdoff= |
1.2 |
|
Switch turn OFF losses in the Boost
Diode(s) |
Forward recovery |
|
|
|
| |
Pd= |
23.3 |
W |
Total Losses Main Diode |
|
|
|
|
| |
Pdsn= |
2.3 |
W |
Snubber diodes losses |
|
|
|
|
| |
Pbs= |
69.1 |
W |
Total PFC Stage Semiconductors Loss |
|
|
|
|
| |
Tcbtx= |
118 |
°C |
MOSFET(s) max allowable case
temperature |
|
|
|
|
| |
Thpfcx= |
103 |
°C |
MOSFET(s) heat sink max allowable
temperature |
|
|
|
|
| |
Tcbd= |
120 |
°C |
Boost diode case temperature |
same htsk with BT |
|
|
|
| |
Rths |
0.77 |
°C/W |
PFC heat sink Thermal Resistance |
|
|
|
|
| |
Pish= |
1.9 |
W |
Power loss, PFC Shunt |
|
|
|
|
| |
Pbpfclf= |
0.8 |
W |
Power loss, PCB PFC path high
frequency |
|
|
|
|
| |
Pbo= |
2.0 |
W |
Total PFC Stage Other Losses |
|
|
|
|
| |
Pesrlf= |
1.4 |
W |
Boost Capacitors low frequency Loss |
|
|
|
|
| |
Pesrhf= |
2.0 |
W |
Boost Capacitors high frequency Loss |
|
|
|
|
| |
Pbt= |
89.5 |
W |
Total PFC Stage Loss |
|
|
|
|
| |
|
|
|
|
|
|
|
|
| |
|
|
|
|
|
|
|
|
| |
DC/DC Stage Loss Evaluation |
|
|
|
|
| |
|
|
|
|
|
|
|
|
| Input data |
Rdso= |
0.200 |
Ohm |
MOSFET Rds, max @25°C |
APT5020BVFR |
|
|
|
| |
Rdsd= |
0.379 |
Ohm |
MOSFET(s) Rds ON Resistance @125°C |
APT5020BVFR |
|
|
|
| |
Rthjc= |
0.11 |
°C/W |
MOSFET(s) junction to case thermal
resistance |
4*APT5020BVFR |
|
|
|
| |
Rthcs= |
0.18 |
°C/W |
MOSFET(s) case to heat sink thermal
resistance |
4*APT5020BVFR |
|
|
|
| |
Tj= |
125 |
°C |
MOSFET(s) Maximum junction
temperature |
APT5020BVFR |
|
|
|
| |
Tja= |
110 |
°C |
MOSFET(s) actual junction temperature |
APT5020BVFR |
|
|
|
| |
Coer= |
253 |
pF |
MOSFET output capacitance @ Vba |
2*APT5020BVFR |
|
|
|
| |
Ibchfx= |
2.69 |
Arms |
DC input Capacitor, max HF ripple
current |
|
|
|
|
| |
Ibchfx= |
2.69 |
Arms |
DC input Capacitor, max HF ripple
current |
Copy from above cell |
|
|
|
| |
Resrin= |
36 |
mOhm |
ESR@100kHz, Boost Capacitors |
3*470uF |
|
|
|
| |
Rdcm= |
10.00 |
mOhm |
DC Resistance, DC/DC CM Inductor |
|
|
|
|
| |
Rbdcp= |
38.19 |
mOhm |
PCB DC/DC path primary |
|
|
|
|
| |
Pttl= |
14.9 |
W |
Power transformer total loss |
|
|
|
|
| |
|
|
|
|
|
|
|
|
| Output data |
Pdc= |
43.4 |
W |
Conduction Loss in Phase Shift Bridge transistors |
|
|
|
|
| |
Psw= |
2.2 |
W |
Switching Loss in Phase Shift Bridge
transistors |
|
|
|
|
| |
Ptr= |
45.5 |
W |
Total Losses Bridge Switches |
|
|
|
|
| |
Tc= |
120 |
°C |
Case temperature |
|
|
|
|
| |
Th= |
112 |
°C |
Heat sink temperature |
|
|
|
|
| |
Rths |
1.37 |
°C/W |
PS Bridge Heat sink Thermal
Resistance |
|
|
|
|
| |
Pcin= |
0.3 |
W |
Power Loss, Input Capacitor |
|
|
|
|
| |
Pcin= |
0.0 |
W |
Power Loss, DC/DC CM Inductor |
|
|
|
|
| |
Pbdcp= |
2.2 |
W |
Power loss, PCB DC/DC path primary |
|
|
|
|
| |
Pdctot= |
60.7 |
W |
Total DC/DC Stage power loss |
|
|
|
|
| |
|
|
|
|
|
|
|
|
| |
|
|
|
|
|
|
|
|
| |
Output Stage Loss Evaluation |
|
|
|
|
| |
|
|
|
|
|
|
|
|
| Input data |
Rbdcslf= |
0.4 |
mOhm |
PCB DC/DC path secondary, low frequency |
|
|
|
|
| |
Rbdcshf= |
2.5 |
mOhm |
PCB DC/DC path secondary, high
frequency |
|
|
|
|
| |
Rocm= |
0.20 |
mOhm |
DC Resistance, Output CM Inductor |
|
|
|
|
| |
Rodm= |
0.10 |
mOhm |
DC Resistance, Output DM Inductor |
|
|
|
|
| |
Rosh= |
0.49 |
mOhm |
DC Resistance, Output Shunt |
|
|
|
|
| |
Rbdco= |
0.57 |
mOhm |
PCB DC/DC path output |
|
|
|
|
| |
Roc= |
1.00 |
mOhm |
DC Resistance, Output Connector |
|
|
|
|
| |
Poitl |
3.0 |
W |
Output Inductor(s) total loss |
|
|
|
|
| |
nrd= |
2 |
|
Number of rectifier diodes |
1/2*63CPQ100 |
|
|
|
| |
Ddcn= |
86.84 |
% |
Nominal DC/DC Stage Duty Cycle |
|
|
|
|
| |
Ddcn= |
86.84 |
% |
Nominal DC/DC Stage Duty Cycle |
Copy from above cell |
|
|
|
| |
Vfr= |
0.70 |
V |
Diode forward voltage @ Tja |
1/2*63CPQ100 |
|
|
|
| |
Rthjc= |
0.20 |
°C/W |
Output Diode(s) junction-case thermal
resistance |
nrd*63CPQ100 |
|
|
|
| |
Rthcs= |
0.12 |
°C/W |
Output Diode case-heatsink thermal
resistance |
nrd*63CPQ100 |
|
|
|
| |
Tj= |
145 |
°C |
Output Diode Maximum junction
temperature |
63CPQ100 |
|
|
|
| |
Tja= |
135 |
°C |
Output Diode actual junction
temperature |
63CPQ100 |
|
|
|
| |
Tc= |
81 |
°C |
Output diode case temperature |
|
|
|
|
| |
nod= |
4 |
|
Number of OR-ing diodes |
1/2*STPS6045CW |
|
|
|
| |
Vfo= |
0.59 |
V |
OR-ing diode forward voltage @ Tja |
1/2*STPS6045CW |
|
|
|
| |
Rthjc= |
0.24 |
°C/W |
OR-ing Diode junction to case thermal
resistance |
nod*1/2*STPS6045CW |
|
|
|
| |
Rthcs= |
0.12 |
°C/W |
OR-ing Diode case-heatsink thermal
resistance |
nod*1/2*STPS6045CW |
|
|
|
| |
Tj= |
145 |
°C |
OR-ing Diode Maximum junction
temperature |
STPS6045CW |
|
|
|
| |
Tja= |
140 |
°C |
OR-ing Diode actual junction
temperature |
STPS6045CW |
|
|
|
| |
Resro= |
9 |
mOhm |
ESR Output Capacitor |
2 x 1800uF/35V |
|
|
|
| |
PLmin= |
2.0 |
W |
Power loss R Load min |
|
|
|
|
| |
Psnb= |
1.0 |
W |
Power loss Clamping |
|
|
|
|
| |
|
|
|
|
|
|
|
|
| Output data |
Pbdcs= |
5.9 |
W |
Power loss DC/DC path secondary |
|
|
|
|
| |
Psatind= |
4.0 |
W |
Power loss saturable inductors |
|
|
|
|
| |
Pocm= |
3.2 |
W |
Power Loss, Output CM Inductor |
|
|
|
|
| |
Podm= |
0.8 |
W |
Power Loss, Output DM Inductor |
|
|
|
|
| |
Posh= |
4.0 |
W |
Power Loss, Output Shunt |
|
|
|
|
| |
Rbdco= |
4. |